UMZ6.8N
Diodes
Zener Diode
UMZ6.8N
!Applications
Constant voltage control
For the ESD measure of a signal line
!Features
1) Small surface mounting type (UMD3)
2) Composite type with two cathode common elements
3) High reliability
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!Construction
Silicon epitaxial planar
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!Circuit
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!External dimensions
(Units: mm)
6 C
2.10.1
1.250.1
0.1Min.
0~0.1
0.150.05
0.30.1
2.00.2
1.30.1
0.65
0.65
0.90.1
0.3
0.6
(All pins have the same dimensions)
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
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!Absolute maximum ratings
(Ta=25
C)
Parameter
Symbol
Limits
Unit
Power dissipation
200
mW
Junction temperature
150
C
Storage temperature
C
Tj
Tstg
-
55~
+
150
P
Total of 2 elements
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!Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Zener voltage
V
Z
6.47
7.14
V
I
Z
=5mA
Reverse current
I
R
-
-
0.5
V
R
=3.5V
Operating resistance
Z
Z
-
-
40
I
Z
=5mA
A
-
Capacitance between terminals
C
T
-
-
9
f=1MH
Z
, V
R
=5V
pF
UMZ6.8N
Diodes
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!Others
Item
Device configuration
Judgment contents
Standard1
Charge/discharge capacitance : 200pF
10%
Charge/discharge capacitance : 150pF
Discharge resistance : 400
10%
Discharge resistance : 330
5 repetitions
No spark or smoke emitted :
25kV
No element destruction :
20kV
No malfunction :
8kV
10 repetitions
No malfunction
Contact :
8kV
Suspended :
15kV
IEC1000-4-2
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!Electrical characteristic curves
(Ta=25
C)
5
6
7
8
1
10
100
1m
10m
100n
ZENER CURRENT : Iz (A)
ZENER VOLTAGE : Vz (V)
Fig.1 Zener voltage characteristic
-
25
C 25
C75
C 125
C
0.01
0.1
1
10
10
1
100
DYNAMIC IMPEADANCE : Zz (
)
ZENER CURRENT : Iz (mA)
Fig.2 Operating resistance
Zener current characteristic
0
0
25
50
100
150
100
200
300
POWER DISSIPATION : Pd (mW)
AMBIENT TEMPERATURE : Ta (C)
Fig.3 Derating curve
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